Triode/MOS tube/transistor/module

N-channel, 30V, 18A, 7 milliohms.

N-channel, 20V, 140mA, 10Ω@1.5V

N-channel, 100V, 5A, 100mΩ@10V

NPN

The low RDS(on) of these small surface-mount MOSFETs ensures minimal power loss and energy savings, making these devices suitable for space-sensitive power management circuits. Typical applications are DC-DC converters and power management in portable and battery-operated products such as computers, printers, PCMCIA cards, cellular and cordless phones.

Utilizing a durable and cost-effective Field Stop II trench structure, this Insulated Gate Bipolar Transistor (IGBT) provides excellent performance in demanding switching applications, along with low on-state voltage and lowest switching losses. This IGBT is ideal for UPS and solar applications. The device combines a flexible and fast co-encapsulation freewheeling diode with low forward voltage.

PNP, 60V, 8A

Type: PNP Collector-emitter breakdown voltage (Vceo): -150V Collector current (Ic): -600mA Power (Pd): 350mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat )@Ic,Ib): 500mV@50mA HFE: 100-200

N-channel, 600V, 16A, 0.47Ω