Triode/MOS tube/transistor/module

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Additionally, the internal gate supply ESD diodes can withstand HBM surge stress above 2kV. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as audio, laptop adapters, lighting, ATX power supplies, and industrial power applications.

P-channel, -30V, -11.2A, 12.5mΩ@10V

This NPN bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-323/SC-70 encapsulation and is suitable for low power surface mount applications.

N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150

FET N-channel, 30V, 80A, 5mΩ@10V

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NPN, Vceo=60V, Ic=100mA, hfe=200~400

Applications: communication modules, industrial control, artificial intelligence, consumer electronics