Triode/MOS tube/transistor/module

The FDMC7570S is suitable for minimizing losses in power conversion applications. Combining advances in silicon and encapsulation technology, it provides the lowest rDS(on) while maintaining excellent switching performance. This device also adds the advantage of a highly efficient monolithic Schottky body diode.

This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.

NPN, Vceo=45V, Ic=800mA, hfe=160~400

N-channel, 600V, 4A

CSD18540Q5B 60V, N-Channel NexFET™ Power MOSFET

Drain-source voltage (Vdss): 30V Continuous drain current (Id): 4.3A Power (Pd): 1.25W On-resistance (RDS(on)@Vgs,Id): 28mΩ@10V, 4.3A