Triode/MOS tube/transistor/module

Transistor Type: NPN Collector Emitter Breakdown Voltage (Vceo): 40V Collector Current (Ic): 600mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 400mV@150mA, 15mA DC current gain (hFE@Ic,Vce): 300@150mA, 2V Characteristic frequency (fT): 200MHz Operating temperature: -55℃~+150℃@(Tj)

triac

MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 6.8/8.4 Continuous Drain Current ID (A) 15