Triode/MOS tube/transistor/module

Type: P-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 0.2A Power (Pd): 1W On-Resistance (RDS(on)@Vgs,Id): 4Ω@-10V,-0.2 A threshold voltage (Vgs(th)@Id): -2.5V@250uA

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): -400V Collector current (Ic): -200mA Power (Pd): 350mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE( sat)@Ic,Ib):750mV@50mA HEF:50-200

N-channel, 600V, 1A--

The device is designed for general purpose amplifiers and switches. The effective dynamic current range of the switch has been extended to 100 mA, and the frequency of the amplifier has been extended to 100 MHz. Designed with Process 23.