Triode/MOS tube/transistor/module

CSD17309Q3 30V, N-Channel NexFET MOSFET™, Single SON3x3, 6.3mΩ

Type: P-Channel Drain-Source Voltage (Vdss): -60V Continuous Drain Current (Id): -1.8A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 200mΩ@10V, 1.8A threshold voltage Vgs(th)@Id): -1.0V to -2.5V@250uA

N-channel, 40V, 35A

N channel

N-Channel, PowerTrench MOSFET, 60V, 80 A, 5 mΩ

NPN, Vceo=160V, Ic=0.6A, hfe=120~180

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, SUPERFET III MOSFETs are suitable for various power systems, enabling system miniaturization and higher energy efficiency. The optimized body diode reverse recovery performance of SUPERFET III FRFET MOSFETs can eliminate additional components and improve system reliability.

NPN, Vceo=50V, Ic=150mA, hfe=30~250