Triode/MOS tube/transistor/module

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

NPN, Vceo=100V, Ic=3A, power transistor

TRANS PNP 400V

Semiconductor transistor field effect transistor MOS tube, TO-252-4L, N+P channel, withstand voltage: 30V/-30V, current: 20A/-12A, 10V internal resistance (Max): 0.02Ω/0.048Ω, 4.5V Internal resistance (Max): 0.04Ω/0.065Ω, power: 25W

DTC143XUA-F2-0000HF

P-channel, 20V, 8.9A, 20mΩ@4.5V