Triode/MOS tube/transistor/module

Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 115A Power (Pd): 80W On-Resistance (RDS(on)@Vgs,Id): 2.2mΩ @10V,20A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate Charge (Qg@Vgs): 100nC@10V Input Capacitance (Ciss@Vds): 4.85nF@15V ,Vds=30V Id=115A Rds=2.2mΩ, working temperature: -55℃~+150℃@(Tj);

PNP Vceo=-50V Ic=-0.15A PC=0.625W

The original factory changed the model, and the performance is exactly the same. The corresponding old model is: FDN335N

NPN 50V 150mA

N-channel, 500V, 13A, 480mΩ@10V

This N-channel MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. This process is optimized to minimize on-resistance while maintaining excellent switching performance.