Triode/MOS tube/transistor/module

Type N VDSS(V) 20 VGS(V) 12 VTH(V) 0.4 IDS28°C(A) 3.6 RDS(Max) 70 PD28°C(W) 1.25

N channel

Type: P-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 170mA Power (Pd): 225mW On-resistance (RDS(on)@Vgs,Id): 3.3Ω@10V,150mA

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

HFE: 200-350

This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.