Triode/MOS tube/transistor/module

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This PNP bipolar transistor is suitable for general purpose amplifier applications. The device features SC-70/SOT-323 encapsulation for low power surface mount applications.

PNP, Vceo=-25V, Ic=-1.5A, hfe=160~300

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 60V Collector current (Ic): 1A Power (Pd): 1.5W Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat )@Ic,Ib): 500mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 100@150mA, 2V Characteristic frequency (fT): 100MH

N-channel 650V 2A

Configuration Dual Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 5.8 VGS(th)(v) 2 RDS(ON)(m?)@4.303V 90 Qg(nC)@4.5V - QgS(nC) 2.5 Qgd(nC) 3 Ciss(pF) 740 Coss(pF) 45 Crss(pF) 24

These N-channel logic level MOSFETs are designed to increase the overall efficiency of DC/DC converters and can be used with synchronous or traditional switching PWM controllers. This MOSFET switches faster and has lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The MOSFET is therefore easier to drive, safer (even at very high frequencies), and the overall efficiency of the DC/DC power supply design is higher.

High Voltage, High Current Darlington Transistor Array

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 25 ID(A)Max. 85 VGS(th)(v) 3 RDS(ON)(m?)@4.498V - Qg(nC)@4.5V - QgS(nC) 12 Qgd(nC) 12 Ciss(pF) 2100 Coss(pF) 255 Crss(pF) 100