Triode/MOS tube/transistor/module

N channel

NPN 30V 100mA 200-450 SOT-23

N-Channel, PowerTrench MOSFET, 100V, 32 A, 36 mΩ

NPN, Vceo=160V, Ic=0.6A, hfe=150~200

N-channel, 30V, 3.6A, 68mΩ@4.5V

Type P VDSS(V) -30 ID@TC=42?C(A) -2.2 PD@TC=42?C(W) 1 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25?C VGS=4.22V 200

This N-channel MOSFET is designed to increase the overall energy efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.

YJD40N04A-F2-3000HF

N-channel, 60V, 9A, 15mΩ@10V

Type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 340mA Power (Pd): 150mW On-resistance (RDS(on)@Vgs,Id): 4Ω@10V,

This P-channel MOSFET is produced using advanced PowerTrench technology. This very high-density process is uniquely suited to minimize on-resistance and is optimized for excellent switching performance.

MOSFET N-CH