Triode/MOS tube/transistor/module

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

IC(A) 1.5 VCEO(V) 25 hFE(β) 120-400 fT(MHZ) 100 VCBO(V) 40 VCE(sat)(W) 0.5 Type NPN

N-channel 55V 42A

150V/5.6A@Ta=25℃/N-channel

This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD31, MJD31C (NPN) and MJD32, MJD32C (PNP) are complementary devices.