Triode/MOS tube/transistor/module

Type N VDS(V) 100V VGS(V) ±20V Vth(V) 1.5V RDS(ON)(mΩ) 100mΩ ID(A) 8A

N-channel, 40V, 5.6A, 42mΩ@10V

This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.

Type: Dual N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 53A Power (Pd): 27W On-Resistance (RDS(on)@Vgs,Id): 6.5mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate Charge (Qg@Vgs): 15nC@10V Input Capacitance (Ciss@Vds): 0.63nF@15V , Vds=40V Id=53A Rds=6.5mΩ, Working temperature: -55℃~+150℃@(Tj)DFN5*6encapsulation;