Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 76 VGS(th)(v) 1.6 RDS(ON)(m?)@4.203V 10 Qg(nC)@4.5V QgS(nC) 3 Qgd(nC) 1.2 Ciss(pF) 680 Coss(pF) 185 Crss(pF) 38

NPN 100W 400V 12A Applications: Designed for high voltage, high speed, power switch control in induction circuits, especially for 115V and 220V switch mode applications, such as switching regulators, inverters, motor controls, solenoid valves/relay drivers and deflection circuits.

N-channel, 100V, 2A, 250mΩ@10V

P groove 30V 17A

N-channel, 100V, 41A, 55mΩ@10V

Semiconductor transistor field effect transistor MOS tube, DFN-8 3.3*3.3, P channel, withstand voltage: -30V, current: -6A, 10V internal resistance (Max): 0.045Ω, 4.5V internal resistance (Max): 0.055Ω , Power: 20W