Triode/MOS tube/transistor/module

Type: P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 114A Power (Pd): 135W On-Resistance (RDS(on)@Vgs,Id): 4.6mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate Charge (Qg@Vgs): 106nC@10V Input Capacitance (Ciss@Vds): 5.7nF@20V Operating Temperature: -55℃~+150℃@(Tj )

N-channel, 60V, 1.6A, 140mΩ@10V

PNP, Vceo=-60V, Ic=-600mA

NPN 450V 2A

N-channel 650V 4A

N-channel, 500V, 24A, 200mΩ@10V

IC(A) 0.2 VCEO(V) 40 hFE(β) 100-300 fT(MHZ) 300 VCBO(V) 60 VCE(sat)(W) 0.3 Type NPN

NPN 130W 230V 15A Applications: Designed for audio and general purpose applications

N-channel, 100V, 1.9A