Triode/MOS tube/transistor/module

NPN, Vceo=50V, Ic=100mA

This NPN bipolar transistor is suitable for audio amplifier applications. The device is housed in a SOT-223 encapsulation and is suitable for medium power surface mount applications.

N-channel, 40V, 180A, 2.4mΩ@10V

N-channel, 600V, 40A, 0.065Ω@10V

MOSFET Type N+N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 15/20 Continuous Drain Current ID (A) 20

N-channel, 60V, 35A, 32mΩ@10V

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW DC Current Gain (hFE@Ic,Vce): 220@2mA,5V