Triode/MOS tube/transistor/module

N channel

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 30V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 200@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj) NPN, Vceo=30V, Ic=0.1A, hfe=200~450, silk screen