Triode/MOS tube/transistor/module

Configuration N+P Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -15 VGS(th)(v) -1.6 RDS(ON)(m?)@4.437V 35 Qg( nC)@4.5V 8 QgS(nC) 3.3 Qgd(nC) 2.3 Ciss(pF) 757 Coss(pF) 122 Crss(pF) 88

Dual P-channel, -20V, -4A, 0.058Ω@-4.5V

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Current (Ic): 150mA Power (Pd): 150mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic, Ib): 100mV@100mA, 10mA DC current gain (hFE@Ic, Vce): 200@2mA, 6V Characteristic frequency (fT): 80MHz Operating temperature: +150℃@(Tj) GR gear (

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 2.8A Power (Pd): 1W On-Resistance (RDS(on)@Vgs,Id): 310mΩ @10V,1A

Dual N-channel, 60V, 2.6A, 0.15Ω@10V

MOSFET Type N+P Drain-Source Voltage (Vdss) (V) -40 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 44/54 Continuous Drain Current ID (A) 10