Triode/MOS tube/transistor/module

2SC1623-L6-F2-0000HF

The NSVJ3557SA3 is a single N-channel junction FET with low-noise amplification (LNA) for automotive antenna applications. The device exhibits high forward transfer admittance and low noise characteristics, resulting in high ESD immunity compared to current JFETs. The device is AEC-Q101 qualified and qualified under the Production Part Approval Process (PPAP) for automotive applications.

The NSVJ3557SA3 is a single N-channel junction FET with low-noise amplification (LNA) for automotive antenna applications. The device exhibits high forward transfer admittance and low noise characteristics, resulting in high ESD immunity compared to current JFETs. The device is AEC-Q101 qualified and qualified under the Production Part Approval Process (PPAP) for automotive applications.

MOS, TO-251, P-channel, -30V, -30A, 15mΩ (Max), 50W

This P-channel MOSFET is produced using advanced PowerTrench technology. This very high-density process is uniquely suited to minimize on-resistance and is optimized for excellent switching performance.

NPN, Vceo=50V, Ic=2A, hfe=200~400

Voltage VDSS30V, conduction resistance Rds10 milliohms, current ID50A

N-channel, 500V, 16A, 0.28Ω@10V

These transistors feature an ultra-small SOT-363 encapsulation for portable products. Their assembly yields a pair of devices that are highly matched across all parameters without the need for costly fine-tuning. Applications include current mirroring, differential sensing and balanced amplifiers, mixers, detectors and limiters. Complementary PNP equivalent model NST65010MW6T1G available.