Triode/MOS tube/transistor/module

N-channel, 100V, 100A, 10mΩ@10V

Configuration Dual Type P-Ch VDS(V) -55 VGS(V) 20 ID(A)Max. -6.8 VGS(th)(v) -1.6 RDS(ON)(m?)@4.324V 125 Qg(nC) @4.5V 4.6 QgS(nC) 1.4 Qgd(nC) 1.6 Ciss(pF) 531 Coss(pF) 59 Crss(pF) 38

NPN 0.2A

Dual P-channel, 20V, 5.3A, 58mΩ@2.9A, 4.5V

P-channel, -20V, -3A, 110mΩ@-4.5V

Interface - Driver, Receiver, Transceiver 8/0

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.