Triode/MOS tube/transistor/module

NPN, Vceo=45V, Ic=100mA, hfe=420~800

N-channel, 30V, 5.9A, 0.023Ω@10V

Configuration N+P Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -12 VGS(th)(v) -1.8 RDS(ON)(m?)@4.248V 32 Qg( nC)@4.5V 13 QgS(nC) 1 Qgd(nC) 4 Ciss(pF) 580 Coss(pF) 105 Crss(pF) 72

NPN,11V,50mA,hfe=56~270

PNP Vceo=-45V Ic=-1A medium power transistor

Configuration Single Type P-Ch VDS(V) -12 VGS(V) 8 ID(A)Max. -6 VGS(th)(v) -0.5 RDS(ON)(m?)@4.82V 23 Qg(nC) @4.5V 27.3 QgS(nC) 3.6 Qgd(nC) 6.5 Ciss(pF) 1025 Coss(pF) 220 Crss(pF) 187