Triode/MOS tube/transistor/module

NPN

N-Channel PowerTrench MOSFET 60 V, 90 A, 5.7 mΩ

MOSFET Type N+N Drain-Source Voltage (Vdss) (V) 60 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 30/35 Continuous Drain Current ID (A) 5

P-channel, VDSS withstand voltage 20V, ID current 0.66A, RDON on-resistance 2.4mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.4-1.0V,

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 420@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)