Triode/MOS tube/transistor/module

Configuration Single Type P-Ch VDS(V) -60 VGS(V) 20 ID(A)Max. -50 VGS(th)(v) - RDS(ON)(m?)@4.514V 18 Qg(nC)@ 4.5V 25 QgS(nC) 6.7 Qgd(nC) 5.5 Ciss(pF) 3635 Coss(pF) 224 Crss(pF) 141

Field effect transistor (MOSFET) P+P channel 30V 6.5A

This N-channel enhancement mode field effect transistor is produced using a high cell density DMOS proprietary technology. This very high-density process is ideally suited to minimize on-resistance and provide excellent switching performance. These products are ideal for low-voltage, low-current applications such as notebook computer power management, battery-powered circuits, and DC motor control.

The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are next-generation ignition IGBTs offered in space-saving D-Pak (TO-252), as well as industry-standard D?-Pak (TO-263), TO-262, and TO-220 plastic encapsulation Superior SCIS functionality. This device is suitable for use in automotive ignition circuits, especially as a coil driver. Internal diodes provide voltage clamping without external components.

YJQ60N03A-F1-1100HF

PNP, Vceo=-40V, Ic=-3A