Triode/MOS tube/transistor/module

double channel

N-channel, 60V, 300mA, 1.6Ω@10V

N-channel 40V 220A

N-channel, 800V, 17A, 290mΩ@10V

Type: P-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 30A Power (Pd): 34W On-Resistance (RDS(on)@Vgs,Id): 52mΩ@10V,15A Threshold Voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 9.8nC@10V Input capacitance (Ciss@Vds): 1.45nF@30V, Vds=60V Id=30A Rds=52mΩ, operating temperature : -55℃~+150℃@(Tj) DFN5*6encapsulation;