Triode/MOS tube/transistor/module
SINO-IC (Coslight Core)
Výrobci
High Diode (Hyde)
Výrobci
P-channel, -20V, -2.3A, 110mΩ@-4.5V
Popis
FMS (beautiful micro)
Výrobci
NPN,Vceo=45V,Ic=100mA
Popis
MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.3/0.6/1.0 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 60
Popis
YFW (You Feng Wei)
Výrobci
RealChip (Shenxin Semiconductor)
Výrobci
N-channel Drain-source voltage (Vdss): 100V Continuous drain current (Id): 0.17A Power (Pd): 0.35W On-resistance (RDS(on)Max@Vgs,Id): 6Ω@10V, 0.17A
Popis
PJSEMI (flat crystal micro)
Výrobci
P channel -30V -4.1A
Popis
CJ (Jiangsu Changdian/Changjing)
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TOSHIBA (Toshiba)
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New product, ULN2803APG (C5252) upgraded product, field effect tube as output tube, lower tube voltage drop, less chip heat generation, better driving performance.
Popis
HXY MOSFET (Huaxuanyang Electronics)
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Field effect transistor (MOSFET) P-channel, VDSS withstand voltage 40V, ID current 5A, RDON on-resistance 85mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-3.0V
Popis
UMW (Friends Taiwan Semiconductor)
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Infineon (Infineon)
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Samwin (Semipower)
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MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.7-1.2 On-Resistance RDS(ON) (mΩ) 33/38 Continuous Drain Current ID (A) 4
Popis
MSKSEMI (Mesenco)
Výrobci
JSMSEMI (Jiesheng Micro)
Výrobci