Triode/MOS tube/transistor/module

This P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is especially suited for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

NPN, Vceo=50V, Ic=150mA

Vce=600V, Ic=80A, Vce(sat)=1.5V

MOS tube type: N-channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 300mA Power (Pd): 313mW On-resistance (RDS(on)@Vgs,Id): 1.2Ω@10V, 300mA

N-Channel 130V 0.1A 0.5W

N-channel, 100V, 3.5A, 95mΩ@10V

2SD1628 is a bipolar transistor, 20V, 5A, low VCE(sat), NPN single PCP, suitable for high current switching applications.