Triode/MOS tube/transistor/module

PNP, Vceo=-45V, Ic=-100mA, hfe=200~450

2SA1037-R-F2-0000HF

Description: Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 300mA Power (Pd): 225W On-Resistance (RDS(on)@Vgs,Id): 2.8Ω@10V,500mA Threshold voltage (Vgs(th)@Id): 2.5V@250uA Operating temperature: +150℃@(Tj)

MOSFET Type N Drain-Source Voltage (Vdss) (V) 120 Threshold Voltage VGS ±20 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 6.5/8 Continuous Drain Current ID (A) 106

This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. The MJD2955 (PNP) and MJD3055 (NPN) are complementary devices.

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70V NPN