Triode/MOS tube/transistor/module

: Transistor type: PNP Collector-emitter breakdown voltage (Vceo): -300V Collector current (Ic): -200mA Power (Pd): 300mW Collector cut-off current (Icbo): 250nA Collector-emitter saturation voltage (VCE (sat)@Ic,Ib): 200mV@20mA HFE 100-200

40A1200V Infineon IGBT, widely used in induction cooker, motor, welding machine industry.

NPN Vceo=30V Ic=0.5A PC=0.35W

Field Effect Transistor (MOSFET) P Ditch VDSS:30V ID:15A