Triode/MOS tube/transistor/module

PNP

SMD transistor Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 400V Collector current (Ic): 100mA Power (Pd): 350mW DC current gain (hFE@Ic,Vce): 50@10mA, 10V

NPN 120W 400V 15A Applications: Designed for high speed, high current switching industrial applications.

Dual NPN, Vceo=120V, Ic=50mA

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Very low saturation voltage, NPN 40V/2A, like PBSS4240, PMMT619, FMMT619.

P-channel, -30V, -7.1A, 25mΩ@-10V