Triode/MOS tube/transistor/module

N-channel, 800V, 190mA, 20Ω@10V

Transistor type: 1 NPN, 1 PNP Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 100mA Power (Pd): 200mW Collector cut-off current (Icbo): 15nA Collector-emitter saturation Voltage (VCE(sat)@Ic,Ib): 600mV@100mA, 5mA; 650mV@100mA, 5mA DC current gain (hFE@Ic, Vce): 200@2mA, 5V; Characteristic frequency (fT) 100MHz Operating temperature +150 ℃@(Tj)

Polarity NPN Dissipated Power (W) 0.5 Maximum Collector Current (mA) 1500 Collector- Base Voltage (V) 40 Saturation Voltage Drop (V) 0.5 Collector/ Base Current (mA) 800/80 Maximum operating frequency (MHz) 100

NPN, Vceo=65V, Ic=0.1A, hfe=110~220

N-channel, 30V, 18A, 27mΩ@4.5V

Power MOSFET, ~10 A, -20 V, P-Channel Enhancement Mode, Single SOIC ~8 encapsulation

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.