Triode/MOS tube/transistor/module

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, the SUPERFET III MOSFET Easy drive family helps manage EMI issues for easier design implementation.

Type N VDS(V) 30V VGS(V) ±20V Vth(V) 1.5V RDS(ON)(mΩ) 9.3mΩ ID(A) 70A

PNP, Vceo=-50V, Ic=-3A, hfe=160~320

N-channel, 500V, 6A, 900mΩ@10V

P-channel, -35V, -4.3A, 55mΩ@-10V

DTC143EE-F2-0000HF

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Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 120A Power (Pd): 147W On-Resistance (RDS(on)@Vgs,Id): 3.8mΩ@10V,40A Threshold Voltage (Vgs(th)@Id): 1.8V@250uA Gate charge (Qg@Vgs): 67nC@10V Input capacitance (Ciss@Vds): 4.739nF@50V, Vds=100V Id=120A Rds=3.8mΩ, working Temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;