Triode/MOS tube/transistor/module

NMOS, 100V/14A, 8.8mΩ;

N-channel, 650V, 5A

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 160V Collector current (Ic): 600mA Power (Pd): 300mW Collector cut-off current (Icbo): 50nA Collector-emitter saturation voltage (VCE(sat) @Ic,Ib): 200mV@50mA HFE: 100-200

P-channel, 20V, 1.5A, 175mΩ@4.5V

-

NPN

Configuration Single Type P-Ch VDS(V) -100 VGS(V) 20 ID(A)Max. -86 VGS(th)(v) -2.1 RDS(ON)(m?)@4.245V - Qg(nC) @4.5V 110 QgS(nC) 15 Qgd(nC) 18 Ciss(pF) 6105 Coss(pF) 728 Crss(pF) 258

Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.