Triode/MOS tube/transistor/module

N-channel, 650V, 20A, 0.18Ω@10V

N groove 650V 4A

NMOS 30V 100mA RDS(on)=8Ω WITH ESD SOT-723

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 300mV@100mA HFE: 300-400

MOS (Field Effect Transistor)

Field effect transistor MOSFET@@gallium nitride GaN power device: Vds: 900V Id: 23A Rds: 150mΩ Qg: 38nC Qrr: 26nC

NPN transistor, HFE:100-250, 500mA Vce=30V

NPN, Vceo=45V, Ic=2A