Triode/MOS tube/transistor/module

N-channel, 30V, 5.8A, 27mΩ@10V

P-channel, -20V, -2.3A, 135mΩ@-4.5V

N-channel, 600V, 4A, 2.4Ω@10V

NPN, Vceo=160V, Ic=600mA, hfe=150~240

MOSFET Type P Drain-Source Voltage (Vdss) (V) -60 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 23/30 Continuous Drain Current ID (A) 30

NTJD1155L integrates P-channel and N-channel MOSFETs in one encapsulation. The device is especially suitable for portable electronic equipment requiring low control signals, low battery voltage and high load current. This P-channel device is designed for use in load switches using ON Semiconductor's advanced trench technology. This N-channel acts as a level shifter with an external resistor (R1) driving the P-channel. The N-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTJD1155L operates from a 1.8 to 8.0 V supply line and can drive loads up to 1.3 A with 8.0 V applied to VIN and VON/OFF.

This N-channel JFET device is suitable for high frequency amplifiers and oscillators.

This N-channel JFET device is suitable for high frequency amplifiers and oscillators.