Triode/MOS tube/transistor/module

This Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) are complementary devices.

MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 8.5/10 Continuous Drain Current ID (A) 10

N-channel, 600V, 7.4A

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 100V Collector Current (Ic): 1A Power (Pd): 900mW

This N-channel MOSFET is designed to increase the overall energy efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.

Bidirectional 800V 16A

N-channel, 250V, 8.8A, 430mΩ@10V