Triode/MOS tube/transistor/module

Type(P)/ESD(Y)/VDS-20(V)/VGS8(±V)/VGS(th)-0.8 to -1(V)/ID-4(A)

Configuration Single Type P-Ch VDS(V) -40 VGS(V) 20 ID(A)Max. -11 VGS(th)(v) -1.9 RDS(ON)(m?)@4.313V 18 Qg(nC) @4.5V 32 QgS(nC) 5.2 Qgd(nC) 8 Ciss(pF) 1500 Coss(pF) 235 Crss(pF) 180

N-channel, 500V, 8A, 850mΩ@10V

N-channel, 600V, 1.2A