Triode/MOS tube/transistor/module

N-channel, 30V, 5.8A, 30mΩ@10V

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Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 50 VGS(th)(v) 1.5 RDS(ON)(m?)@4.159V 10 Qg(nC)@4.5V - QgS(nC) 5.5 Qgd(nC) 3 Ciss(pF) 1584 Coss(pF) 145 Crss(pF) 55

N-channel 80V 68A

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

NPN, Vceo=50V, Ic=150mA, hfe=200~600

PNP, Vceo=-80V, Ic=-0.5A, hfe=180~390

Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 60 VGS(th)(v) 1.6 RDS(ON)(m?)@4.368V 9.2 Qg(nC)@4.5V - QgS(nC) 3.8 Qgd(nC) 9 Ciss(pF) 1460 Coss(pF) 180 Crss(pF) 146

N-channel, 20V, 3.4A, 60mΩ@4.5V

Configuration Single Type P-Ch VDS(V) -15 VGS(V) 12 ID(A)Max. -4.8 VGS(th)(v) -0.7 RDS(ON)(m?)@4.36V 30 Qg(nC) @4.5V 7.8 QgS(nC) 1.2 Qgd(nC) 1.6 Ciss(pF) 738 Coss(pF) 280 Crss(pF) 190