Triode/MOS tube/transistor/module

N-channel, 100V, 2A, 180mΩ@10V

NPN,Vceo=60V,Ic=1A

1200V 80mΩ

P-channel, 20V, 1.4A, 480mΩ@4.5V

Low-voltage MOSFET power supply, energy storage power supply, UPS, Vds=150V Id=135A Rds=6.2mΩ (7.3mΩ max) TO-220encapsulation

Collector-base reverse breakdown voltage-40V, collector-emitter reverse breakdown voltage-40V, collector current IC-200mA,

ULQ2003A-Q1 Automotive High Voltage, High Current Darlington Transistor Array

Type: P-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 52A Power (Pd): 50W On-Resistance (RDS(on)@Vgs,Id): 18mΩ@10V,15A Threshold Voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 70nC@10V Input capacitance (Ciss@Vds): 4.55nF@30V, Vds=60V Id=52A Rds=18mΩ, operating temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;

N-channel, 500V, 14A

P-channel, -30V, -4.2A