Triode/MOS tube/transistor/module

P-channel, -30V, -2.7A, 190mΩ@-10V

This bipolar power transistor is suitable for general power amplifier and switching applications. TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) are complementary devices.

ON Semiconductor's e2 PowerEdge Series Low Saturation Voltage Bipolar Transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control. Typical applications are DC-DC converters and power management in portable and battery-operated products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor control in mass storage products such as disk drives and tape drives. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.

This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a monolithic bias network consisting of a single transistor and two resistors. Series base resistor and base resistor. The BRT eliminates the need for these separate components, which are integrated into a single device. Using BRT can reduce system cost and save board space.