onsemi (Ansemi)
Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
NSV20101JT1G NPN 20V 1A 20 V, 1.0 A, low saturation voltage, NPN bipolar transistor

NSV20101JT1G

NPN 20V 1A 20 V, 1.0 A, low saturation voltage, NPN bipolar transistor
Číslo dílu
NSV20101JT1G
Kategorie
Triode/MOS Tube/Transistor > Triode(BJT)
Výrobce/značka
onsemi (Ansemi)
Encapsulation
SC-89-3
Balení
taping
Počet balíků
3000
Popis
ON Semiconductor's e2PowerEdge series of low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control. Typical applications are DC-DC converters and power management in portable and battery-operated products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor control in mass storage products such as disk drives and tape drives. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 72570 PCS
Kontaktní informace
Klíčová slova NSV20101JT1G
NSV20101JT1G Elektronické komponenty
NSV20101JT1G Odbyt
NSV20101JT1G Dodavatel
NSV20101JT1G Distributor
NSV20101JT1G Datová tabulka
NSV20101JT1G Fotky
NSV20101JT1G Cena
NSV20101JT1G Nabídka
NSV20101JT1G Nejnižší cena
NSV20101JT1G Vyhledávání
NSV20101JT1G Nákup
NSV20101JT1G Chip