onsemi (Ansemi)
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NSS60100DMTTBG Dual 60 V, 1 A, Low VCE(sat) PNP Bipolar Transistors, WDFN6 encapsulation

NSS60100DMTTBG

Dual 60 V, 1 A, Low VCE(sat) PNP Bipolar Transistors, WDFN6 encapsulation
Číslo dílu
NSS60100DMTTBG
Kategorie
Triode/MOS Tube/Transistor > Triode(BJT)
Výrobce/značka
onsemi (Ansemi)
Encapsulation
W-DFN-6(2x2)
Balení
taping
Počet balíků
3000
Popis
ON Semiconductor's e2PowerEdge series of low VCE(sat) bipolar transistors feature ultra-low saturation voltage VCE(sat) and high current gain capability in a small 2x2 mm plastic leadless encapsulation. These devices are designed for low-voltage, high-speed switching applications that require economical and efficient energy control. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 51460 PCS
Kontaktní informace
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Klíčová slova NSS60100DMTTBG
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NSS60100DMTTBG Chip