onsemi (Ansemi)

TO-263AB

taping

800

These N-channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's high cell density DMOS proprietary process. This very high-density process is uniquely suited to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are especially suitable for low-voltage applications requiring fast switching, low in-line power loss, and transient protection, such as automotive, DC/DC converters, PWM motor control, and other battery-powered circuits.