onsemi (Ansemi)
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H11G2TVM DC Input Isolation Voltage (rms): 4170V High Voltage Photoelectric Darlington Output Optocoupler

H11G2TVM

DC Input Isolation Voltage (rms): 4170V High Voltage Photoelectric Darlington Output Optocoupler
Číslo dílu
H11G2TVM
Kategorie
Optocoupler/LED/Digital Tube/Optoelectronic Device > Optocoupler-Phototransistor Output
Výrobce/značka
onsemi (Ansemi)
Encapsulation
DIP-6
Balení
bagged
Počet balíků
1000
Popis
The H11G1M and H11G2M are opto-Darlington optocouplers. These devices feature a GaAs infrared emitting diode coupled to a silicon Darlington junction phototransistor with an integrated base-emitter resistor for optimized high temperature characteristics.
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 90574 PCS
Kontaktní informace
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H11G2SR2M DC Input Isolation Voltage (rms): 4170V High Voltage Photoelectric Darlington Output Optocoupler
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Klíčová slova H11G2TVM
H11G2TVM Elektronické komponenty
H11G2TVM Odbyt
H11G2TVM Dodavatel
H11G2TVM Distributor
H11G2TVM Datová tabulka
H11G2TVM Fotky
H11G2TVM Cena
H11G2TVM Nabídka
H11G2TVM Nejnižší cena
H11G2TVM Vyhledávání
H11G2TVM Nákup
H11G2TVM Chip