onsemi (Ansemi)
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FGD3N60LSDTM 40W 600V 6A IGBT, 600V, 3A, 1.2V, DPAK, Planar

FGD3N60LSDTM

40W 600V 6A IGBT, 600V, 3A, 1.2V, DPAK, Planar
Číslo dílu
FGD3N60LSDTM
Kategorie
Transistor/MOS tube/transistor > IGBT tube/module
Výrobce/značka
onsemi (Ansemi)
Encapsulation
TO-252
Balení
taping
Počet balíků
2500
Popis
ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) offer extremely low conduction losses. The device is suitable for applications requiring very low on-state voltage drop.
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 88571 PCS
Kontaktní informace
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Klíčová slova FGD3N60LSDTM
FGD3N60LSDTM Elektronické komponenty
FGD3N60LSDTM Odbyt
FGD3N60LSDTM Dodavatel
FGD3N60LSDTM Distributor
FGD3N60LSDTM Datová tabulka
FGD3N60LSDTM Fotky
FGD3N60LSDTM Cena
FGD3N60LSDTM Nabídka
FGD3N60LSDTM Nejnižší cena
FGD3N60LSDTM Vyhledávání
FGD3N60LSDTM Nákup
FGD3N60LSDTM Chip