DIODES (US and Taiwan)
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DGD0636MS28-13 Half-bridge IGBT MOSFET sink current 350mA source current 200mA

DGD0636MS28-13

Half-bridge IGBT MOSFET sink current 350mA source current 200mA
Číslo dílu
DGD0636MS28-13
Kategorie
Power Chip > Gate Driver IC
Výrobce/značka
DIODES (US and Taiwan)
Encapsulation
SO-28-300mil
Balení
taping
Počet balíků
1500
Popis
Žádost o nabídku
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Na skladě 71039 PCS
Kontaktní informace
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DGD0636MS28-13 Half-bridge IGBT MOSFET sink current 350mA source current 200mA
DGD0636MS28-13
Half-bridge IGBT MOSFET sink current 350mA source current 200mA
DIODES (US and Taiwan)
Klíčová slova DGD0636MS28-13
DGD0636MS28-13 Elektronické komponenty
DGD0636MS28-13 Odbyt
DGD0636MS28-13 Dodavatel
DGD0636MS28-13 Distributor
DGD0636MS28-13 Datová tabulka
DGD0636MS28-13 Fotky
DGD0636MS28-13 Cena
DGD0636MS28-13 Nabídka
DGD0636MS28-13 Nejnižší cena
DGD0636MS28-13 Vyhledávání
DGD0636MS28-13 Nákup
DGD0636MS28-13 Chip