Triode/MOS tube/transistor/module

N-channel, 1500V, 4A, 5Ω@10V

P channel -40V -50A

Rated power 150mW Collector current Ic200mA Collector-emitter breakdown voltage Vce40V Transistor type NPN+PNP

(NPN+PNP)

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

N-channel, 600V, 2.2A, 4.4Ω@10V

N ditch