Triode/MOS tube/transistor/module

N-channel 20V 6A

Field Effect Transistor (MOSFET) Type: P-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 4.4A Power (Pd): 1.2W On-Resistance (RDS(on)@Vgs,Id): 40mΩ@10V, 4.4A Threshold voltage (Vgs(th)@Id): 0.9V@250uA Gate charge (Qg@Vgs): 22nC@10V Input capacitance (Ciss@Vds): 1.04nF@15V , Vds=30V Id =4.4A Rds=40mΩ, working temperature: -55℃~+150℃@(Tj);

N channel

NPN

Power MOSFET, -60 V, -211 mA, Single P-Channel, SOT?23 encapsulation