Triode/MOS tube/transistor/module

Darlington driver, 8-channel (8-ch)

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 23A Power (Pd): 35W On-Resistance (RDS(on)@Vgs,Id): 26mΩ@10V,20A Threshold Voltage ( Vgs(th)@Id): 1.7V@250uA Gate charge (Qg@Vgs): 19nC@10V Input capacitance (Ciss@Vds): 1.05nF@30V, Vds=60V Id=23A Rds=26mΩ, operating temperature: -55℃~+150℃@(Tj) DFN3x3encapsulation;

N-channel, 650V, 10A, 1.2Ω@10V

PNP -60V -1A

Configuration Single Type N-Ch VDS(V) 200 VGS(V) 20 ID(A)Max. 5 VGS(th)(v) 1.7 RDS(ON)(m?)@4.478V - Qg(nC)@4.5V 15 QgS(nC) 2.4 Qgd(nC) 6.1 Ciss(pF) 300 Coss(pF) 53 Crss(pF) 15

This complementary MOSFET device is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance.