Triode/MOS tube/transistor/module

N-channel, 30V, 3.7A, 50mΩ@10V

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This P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

Transistor Type: NPN Collector Emitter Breakdown Voltage (Vceo): 160V Collector Current (Ic): 600mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 50nA DC Current Gain (hFE@Ic,Vce): 100 @10mA,5V Operating temperature: -55℃~+150℃@(Tj)

This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.

N+P channel, 60V, 5.3A, 26mΩ@10V; -60V, -4.9A, 55mΩ@-10V

Field Effect Transistor (MOSFET) N+N Ditch VDSS:60V ID:6A

600V 15A

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -2.9 VGS(th)(v) -0.5 RDS(ON)(m?)@4.42V 100 Qg(nC) @4.5V 5.6 QgS(nC) 0.72 Qgd(nC) 1.45 Ciss(pF) 332 Coss(pF) 48 Crss(pF) 42