Triode/MOS tube/transistor/module

Type: N-Channel Drain-Source Voltage (Vdss): 48V Continuous Drain Current (Id): 18A Power (Pd): 46W On-Resistance (RDS(on)@Vgs,Id): 5.8mΩ@10V,12A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate charge (Qg@Vgs): [email protected] Input capacitance (Ciss@Vds): 2.332nF@15V , Vds=48V Id=18A Rds=5.8mΩ ,Working temperature: -55℃~+150℃@(Tj)

N-channel, 400V, 6A

MOSFET N/P-CH 20V

This P-channel 2.5V specified MOSFET uses an advanced low voltage PowerTrench process. This product is ideal for battery management applications.

N+P channel, 20V, 4.2A, 36mΩ@4.5V; -20V, -2.5A, 83mΩ@-4.5V

Power MOSFET, -20V, -10A, 50mΩ, Single P-Channel, SOT-223, Logic Level